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Pune, India, July 7, 2021 (Global News Service)-Global Gallium Nitride Epitaxial wafer “Market Share, Trends, Analysis and Forecasts 2020-2030” provides insights on key developments, business strategies, R&D activities, supply chain analysis, competitive landscape and market composition analysis.
GaN epitaxial wafer is a composite (Al, In, Ga) N multilayer structure developed by a metal integrated chemical vapor accumulation (MOCVD) epitaxial process on a silicon or silicon carbide (SiC) substrate. Subsequent GaN/Si and GaN/SiC epitaxial wafers are used to manufacture electronic devices, showing A-one performance and necessary technology in terms of radio frequency power density, power switching ratio, sensor strength and sensitivity.
The substrate is a wafer formed of a semiconductor single crystal material. This matter can directly enter the wafer manufacturing process to upgrade semiconductor devices; in addition, it can be processed through an epitaxial process to create an epitaxial wafer. Epitaxy refers to the activity of growing a new single crystal on a single crystal substrate that has been carefully processed such as trimming, grating, and luminescence.
Epitaxy is a process of fixing an added single crystal silicon layer on the polished crystal surface of a silicon wafer. This process makes it possible to individually select the component characteristics of the polished substrate, thereby creating a wafer with contrasting characteristics in the substrate and the epitaxial layer. In countless cases, this is mandatory for semiconductor component activities.
View the entire report with a table of contents: https://www.insightslice.com/gan-epitaxial-wafers-market
Growth drivers of the GaN epitaxial wafer market
Bulk single crystal materials find it challenging to meet the booming needs of various semiconductor devices. Therefore, it accelerates the improvement of thin layer single crystal material epitaxy.
Regarding silicon, when silicon epitaxial growth technology was established, the manufacture of silicon high-frequency and high-power transistors was challenging. From the perspective of the transistor principle, to achieve high frequency and high power, the disintegration voltage of the collector area must be large; the series resistance requirement is small. That is, the congestion pressure drop should be…
The full story on Benzinga.com
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