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Almere, The Netherlands
February 11, 2022
ASM International NV (Euronext Amsterdam: ASM) signed an agreement with the University of Helsinki to form and fund the Atomic Layer Deposition Center of Excellence (ALD CoE) at the university‘s Kumpula science campus.
The five-year partnership is a significant boost to ASMI’s nearly two-decades-long collaboration with the university. As part of the agreement, ASMI will increase its current funding to the university. It will also expand the team at ASM Microchemistry Oy. ASMI’s subsidiary, which has pioneered atomic layer deposition (ALD) technology since its founding in 1987, is co-located with the University of Helsinki at Kumpula.
ALD is an advanced technology for depositing thin-film materials conformally and with precise control over thickness and composition. ALD and other atomic layer processes play an increasingly critical role in semiconductor technologies as Moore’s Law scaling drives semiconductor devices into the atomic scale Ångström (1 Ångström = 1/10 nanometer) regime, and complex 3D vertical structures. The HelsinkiALD group at the university has won global recognition for ALD chemistry innovations, and its high-quality research – in collaboration with ASMI – has translated into a number of breakthroughs in semiconductor applications.
The ALD CoE will build on this success, focusing on research around ALD that is necessary for future …
Full story available on Benzinga.com
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